Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films
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چکیده
We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si~001! substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and ~hhh! manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. © 1999 American Institute of Physics. @S0021-8979~99!35108-2#
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تاریخ انتشار 1999